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Nano Device Processing Lab


(1) Papers

40. Suhhyun Kim, Min Sup Choi, Deshun Qu, Chang Ho Ra, Xiaochi Liu, Minwoo Kim, Young Jae Song, Won Jong Yoo, "Effects of plasma treatment on surface properties of ultrathin layered MoS2", 2D materials, 3, 035002, 2016 DOI: doi:10.1088/2053-1583/3/3/035002

39. Chang-Ho Ra, Min Sup Choi, Daeyeong Lee, Won Jong Yoo, "Effects of Plasma Treatment on Contact Resistance and Sheet Resistance of Graphene FET", J. Korean Inst. Surf. Eng., 49, 152-158, 2016

38. Dewu Yue, Daeyeong Lee, Youngdae Jang, Min Sup Choi, Hye Jin Nam, Duk-Young Jung, and Won Jong Yoo, "Passivated ambipolar black phosphorus transistor", Nanoscale, DOI: 10.1039/C6NR02554D, 2016

37. Xiaochi Liu, Deshun Qu, Jungjin Ryu, Faisal Ahmed, Zheng Yang, Daeyeong Lee, Won Jong Yoo, "P-type polar transition of chemically doped multilayer MoS2 transistor", Advanced Materials, v28, p2345, DOI: 10.1002/adma.201505154, 2016

36. Deshun Qu, Xiaochi Liu, Faisal Ahmed, Daeyeong Lee and Won Jong Yoo, "Self-screened high performance multi-layer MoS2 transistor formed by using bottom graphene electrode", Nanoscale, DOI: 10,1039/C5NR06076A, 2015

35. Faisal Ahmed, Min Sup Choi, Xiaochi Liu and Won Jong Yoo, "Carrier transport at the metal-MoS2 interface", Nanoscale, 7, 9222, 2015

34. Hua-Min Li, Daeyeong Lee, Deshun Qu, Xiaochi Liu, Jungjin Ryu, Alan Seabaugh, and Won Jong Yoo "Ultimate thin vertical p-n junction composed of two-dimensional layered molybdenum disulfide", Nature Communications, 6, 6564, 2015

33. Xiaochi Liu, E. H. Hwang, Won Jong Yoo, Suyoun Lee, Byung-ki Cheong "High carrier mobility in Si-MOSFETs with a hexagonal boron nitride buffer layer", Solid State Communications, 209-210, 1, 2014

32. Dewu yue, Changho Ra, Xiaochi Liu, Daeyeong Lee and Won Jong Yoo, "Edge contacts of graphene formed by using a controlled plasma treatment", Nanoscale, , 825, 2015

31. Min Sup Choi, Deshun Qu, Daeyeong Lee, Xiaochi Liu, Kenji Watanabe, Takashi Taniguchi, Won Jong Yoo "Lateral MoS2 p–n Junction Formed by Chemical Doping for Use in High-Performance Optoelectronics", ACS Nano, 8, 9332, 2014

30. Sarang Gahng, Chang Ho Ra, Yu Jin Cho, Jang Ah Kim, Taesung Kim, Won Jong Yoo "Reduction of metal contact resistance of graphene devices via CO2 cluster", Applied Physics Letters, 104, 223110, 2014

29. Seung Hwan Lee, Daeyeong Lee, Wan Sik Hwang, Euyheon Hwang, Debdeep Jena, and Won Jong Yoo "High-performance photocurrent generation from two-dimensional WS2 field-effect transistors", Applied Physics Letters, 104, 193113, 2014. 

28. Hua-Min Li, Dae-Yeong Lee, Min Sup Choi, Deshun Qu, Xiaochi Liu, Chang-Ho Ra and Won Jong Yoo "Metal-Semiconductor Barrier Modulation for High Photoresponse in Transition Metal Dichalcogenide Field Effect Transistors", Scientific Reports 4, 4041, 2014.

27. Seung Hwan Lee, Min Sup Choi, Jia Lee, Chang Ho Ra, Xiaochi Liu, Euyheon Hwang, Jun Hee Choi, Jiangqiang Zhong, Wei Chen, and Won Jong Yoo, "High performance vertical tunneling diodes using graphene/hexagonal boron nitride/graphene hetero-structure", Applied Physics Letters 104, 053103, 2014.

26. Ju-Hyuck Lee, Keun Young Lee, Manoj Kumar Gupta, Tae Yun Kim, Dae-Yeong Lee, Junho Oh, Changkook Ryu, Won Jong Yoo, Chong-Yun Kang, Seok-Jin Yoon, Ji-Beom Yoo, and Sang-Woo Kim, "Highly stretchable piezoelectric-pyroelectric hybrid nanogenerator", Advanced Materials, 2013.

25. Gwan-Hyoung Lee, Young-Jun Yu, Xu Cui, Nicholas Petrone, Chul-Ho Lee, Min Sup ChoiDae-Yeong Lee, Changgu Lee, Won Jong Yoo, Kenji Watanabe, Takashi Taniguchi, Colin Nuckolls, Philip Kim, and James Hone, Flexible and Transparent MoS2 Field Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures, ACS Nano, (2013).

24. Dae-Yeong Lee, Hyunjin Kim. Hua-Min Li, A-Rang Jang, Yeong-Dae Lim, Seung Nam Cha, Young Jun Park, Dae Joon Kang, Won Jong Yoo, Hybrid energy harvester based on nanopillar solar cells and PVDF nanogenerator, Nanotechnology, 24, 175402 (2013).

23. Min Sup Choi, Gwan-Hyoung Lee, Young-Jun Yu, Dae-Yeong Lee, Seung Hwan Lee, Philip Kim, James Hone, Won Jong Yoo, Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices, Nature communications, 4, 1624 (2013).

22. Gang Zhang, Zhe Wu, Jeung-hyun Jeong, Doo Seok Jeong, Won Jong Yoo, Byung-ki Cheong, Modified write-and-verify scheme for improving the endurance of multi-level cell phase-change memory using Ge-doped SbTe, Solid-State Electronics, 76, 67-70 (2012).

21. Hua-Min Li, Dae-Yeong Lee, and Won Jong Yoo, Optoelectronic Performance of Radial-Junction Si Nanopillar and Nanohole Solar Cells, IEEE TED, 59, 2368 (2012).

20. Yeong-Dae Lim, Dae-Yeong Lee, Tian-Zi Shen, Chang-Ho Ra, Jae-Young Choi, and Won Jong Yoo, Si-Compatible Cleaning Process for Graphene Using Low-Density Inductively Coupled Plasma, ACS Nano, 6, 4410 (2012).

19. Min Sup Choi, Seung Hwan Lee, and Won Jong Yoo, Plasma treatments to forming metal contacts in graphene FET, J. Appl. Phys. 110, 073305 (2011).

18. Zhang Gang, Zhe Wu, and Won Jong Yoo, High-Speed Multi-Level NAND Flash Memory with Tight Vth Distribution Using Engineered-Potential-Well and Forward-Bias Adjusted Programming, IEEE Transactions on Electron Devices, 58(10), 3321-3228 (2011).

17. Hua-Min Li, Gang Zhang, and Won Jong Yoo: Estimation of Trapped Charge Density in SONOS Flash Memory Using Parallel Capacitor Model, IEEE Transactions on Electron Devices, 58(10), 3254-3259 (2011).

16. Yeong-Dae Lim, Dae-Yeong Lee, Won Jong Yoo, Han Seo Ko and Soo-Hong Lee, Temperature of a Semiconducting Substrate Exposed to Inductively Coupled Plasma, JKPS, 59(2) 262-270 (August 12, 2011).

15. Gang Zhang, Zhe Wu, Jeung-hyun Jeong, Doo Seok Jeong, Won Jong Yoo, and Byung-ki Cheong Multi-Level Cell Storage with A Modulated Current Method for Phase-Change Memory Using Ge-Doped SbTe Current Appl. Phys. 11 (supplement 2), e79-e81 (2011).

14. Hua-Min Li, Gang Zhang, Cheng Yang, Dae-Yeong Lee, Yeong-Dae Lim, Tian-Zi Shen and Won Jong Yoo, Young Jun Park, Hyunjin Kim, Seung Nam Cha, and Jong Min Kim, Enhancement of Light Absorption Using High-k Dielectric in Localized Surface Plasmon Resonance for Silicon-Based Thin Film Solar Cells J. Appl. Phys. 109, 093516 (2011).

13. Cheng Yang, Gang Zhang, Dae-Young Lee, Hua-Min Li, Young-Dae Lim, Won Jong Yoo, Young Jun Park and Jong Min Kim “Self-assembled wire arrays and ITO Contacts for Si Nano-wire Solar applications”, Chin. Phys. Lett. 28 (3), 035202 (2011).

12. G. Zhang, C.H. Ra, H.-M. Li, T.-Z. Shen, B.-k. Cheong, and W. J. Yoo, IEEE TED, 57(11) 2794-2800  “Modified Potential Well Formed by Si/SiO2/TiN/TiO2/SiO2/TaN for Flash Memory Application” (2010).

11. Huamin Li, Gang Zhang, and Won Jong Yoo, Thin Solid Films 518, 6382-6384  “Deep Level Transient Spectroscopy on Charge Traps in high-k ZrO2” (2010).

10. C. Yang, G. Zhang, H.-M. Li, W. J. Yoo, Y. J. Park, and J. M. Kim, JKPS 56, 1488-1491  “Localized Surface Plasmon Resonance Caused by Ag Nanoparticles on SiN for Solar Cell Applications” (2010).

9. G. Zhang and W. J. Yoo, Solid State Electronics 54(1) 14-17 “Pulse Agitated Self-Convergent Programming for 4-Bit per Cell Dual Charge Storage Layer Flash Memory” (2010).

8. Gang Zhang and Won Jong Yoo, IEEE TED, 56(12) 3027-3032 “Vth Control by Complementary Hot Carrier Injection for SONOS Multi-Level Cell Flash Memory” (2009).

7. G. Zhang and W. J. Yoo, J. Nanoscience and Nanotechnology, 9, 7446-7450 Dual Phase TiOxNy/TiN Charge Trapping Layer for Low-Voltage and High-Speed Flash Memory Application” (2009).

6. Gang Zhang, Chang Ho Ra, Hua-Min Li, Cheng Yang and Won Jong Yoo56(9) 1966-1973  IEEE TED 2nd-Bit-Effect-Free Multi-Bit Cell Flash Memory Using Si3N4/ZrO2 Split Charge Trapping Layer” (2009).

5 Yeong-Dae Lim, Seung-Hwan Lee, Won Jong Yoo, Oh-Jin Jung, Sang-Chul Kim and Han-Choon Lee, J. Korea Physical Soc, 54(5) 1774-1778 “Roles of F, O and Positive Ions in SF6/O2 Plasma in Forming Deep Via Structures” (2009).

4. Hua-Min Li, Chang-Ho Ra, Gang Zhang, Won Jong Yoo, Ki-Wook Lee, Jae-Dong Kim, J. Korea Physical Soc, 54(3) 1096-1099 Frequency and Temperature Dependence of Dielectric Properties of PCB Substrate for Advanced Packaging Application (2009).

3 Seung-Heon Ryu,1 Cheng Yang,1 Won Jong Yoo,1* Dong-Ho Kim 2 , and Teak Kim, J. Koea Physical Soc, 54(3) 1016-1020 Effects of nanostructures formed by plasma etching on reflectance of solar cells” (2009).

2. Seung-Hwan Lee, Yeong-Dae Lim, Won Jong Yoo, J. Koea Physical Soc, 54(3) 998-1001 Effects of Pulsating Bias Power on Deep Si Via Etching” (2009).

1. Yeong-Dae Lim, Seung-Hwan Lee, and Won Jong Yoo, J. Koea Physical Soc, 54(2) 616-620  APPLICATION OF BLACK SILICON PHENOMENON TO FORM HIGH-ASPECT RATIO DEEP VIAS” (2009).


(2) IEDM presentations

5. Hua-Min Li et al. IEEE Intl. Electron Devices Meeting (IEDM 2013), 9-11 Dec. 2013, "Gate-Controlled Schottky Barrier Modulation for Superior Photoresponse of MoS2 Field Effect Transistor"

4. Hua-Min Li, Tian-Zi Shen, Dae-Yeong Lee and Won Jong Yoo, IEEE Intl. Electron Devices Meeting (IEDM 2012), 10-12 Dec. 2012, "High Photocurrent and Quantum Efficiency of Graphene Stack Photodetector Assembled by Layer-by-Layer Transfer"

3. Gang Zhang, Tian-Zi Shen, Hua-Min Li, Dae-Yeong Lee, Chang-Ho Ra and Won Jong Yoo*, IEEE Intl Electron Devices Meeting (IEDM 2011), 5-7 Dec 2011, “Electrically Switchable Graphene Photo-Sensor using Phase-Change Gate Filter for Non-Volatile Data Storage Application with High-Speed Data Writing and Access”

2. Hua-Min Li , Dae-Yeong Lee, Yeong-Dae Lim, Cheng Yang, Gang Zhang, HyunJin Kim, SeungNam Cha, Jong Min Kim, and Won Jong Yoo*, IEEE Intl Electron Devices Meeting (IEDM 2011), 5-7 Dec 2011 “High Efficiency Radial-Junction Si Nanohole Solar Cells Formed by Self-Assembling High Aspect Ratio Plasma Etching”

1. Gang Zhang, Chang Ho Ra, Hua-Min Li, Cheng Yang, and Won Jong Yoo, IEEE Intl Electron Devices Meeting (IEDM 2009), 7-9 Dec 2009  “Potential Well Engineering by Partial Oxidation of TiN High-Speed and Low-Voltage Flash Memory with 125C Data Retention and Excellent Endurance”

(3) Patents


8. Eletronic device including horizontal type diode using 2D material and method of manufacturing the same, 미국 출원번호 14/554,363, 출원일자 2014.11.26

7. Tunneling devices and methods of manufacturing the same, 미국 출원번호 14/188,862, 출원일자 2014.02.25

6. Two-dimensional material stacked flexible photosensor, 미국 출원번호 14/079,123, 출원일자 2013.11.13

5. 그래핀 물성 복귀 방법 및 장치, 미국 출원번호 13/864,732, 출원일자 2013.04.17

4. 적층된 그라핀과 플라즈몬을 이용한 고성능 광검출기, 미국 출원번호 13/747,920, 출원일자 2013.01.23

3. 투명전극에 의한 계면확장 graphene photodetector, 미국 출원번호 13/613,279, 출원일자 2012.09.13

2. 표면 플라즈마몬과 high-k 물질을 이용한 반사 방지구조 및 그 제조방법, 미국 출원번호 13/064,290, 출원일자 2011.03.16

1. J. H. Chen, W. J. Yoo, and Daniel Chan, A Method to assemble Al2O3 Dielectric Nano-dots on SiO2: Singapore Patent 134762 (Granted on 30 May 2008)



15. 심전자, 유원종, 이화민, 최민섭, 최재영, 2차원 소재 적층 플렉서블 광센서, 특허등록번호 10-1532310, 등록일자: 2015.06.23

14. 2차원 물질을 이용한 수평형 다이오드를 포함하는 전자소자 및 그 제조방법, 대한민국 출원번호 10-2014-0061167, 출원일자: 2014.05.21

13. 최준희, 유원종, 이승환, 최민섭, 유호지, 이지아, 터널링 소자 및 그 제조방법, 대한민국 출원번호 10-2013-0083154, 출원일자: 2013.07.15

12. 유정준, 심전자, 유원종, 이화민, 최민섭, 최재영, 2차원 소재 적층 플렉서블 광센서, 대한민국 출원번호 10-2013-0016972, 출원일자: 2013.02.18

11. 최재영,유원종,이승환,임영대, 그래핀 물성 복귀 방법 및 장치, 대한민국 출원번호 10-2012-0089736, 출원일자: 2012.08.16

10. 최재영,유원종,라창호,심전자복합 투명 전극을 포함하는 그래핀 기반 포토 디텍터와  그 제조방법 및 포토 디텍터를 포함하는 장치대한민국 출원번호 11-121729, 출원일자: 20111121

9. 유원종,최민섭,이승환그래핀상의 금속 박막의 형성 방법대한민국 출원번호 11-100030, 출원일자: 20110930

8. 김성민,차승남,이화민,유원종, 광전소자 및 그 제작방법대한민국 출원번호 11-61802, 출원일자: 20110624

7. 김성민,차승남,유원종,이대영,이화민, 표면 플라즈몬 발생 장치이의 제조방법및 표면  플라즈몬 발생 장치를 이용한 광소자, 대한민국 출원번호 11-72566, 출원일자: 20110721

6. 유원종,라창호,이대영,이승환그래핀의 히스테리시스 특성을 이용한 불휘발성 메모리  소자와 그 제조 및 동작방법대한민국 출원번호 11-63127, 출원일자: 20110628

5. 장강,유원종,라창호그래핀과 상변화 물질을 포함하는 불휘발성 메모리  소자와 그 제조 및 동작방법대한민국 출원번호 11-61804, 출원일자: 20110624

4. 김성민,차승남,이화민,유원종광전소자 제조방법대한민국 출원번호 11-61802, 출원일자: 20110624

3. 유원종이승환, “반도체기판의 비아형성방법” 대한민국 특허등록번호 10-1037043,  2011.5.19

2. 유원종임영대, Yang Cheng “나노와이어의 제조방법” 대한민국 특허등록번호 10-1027315,  2011.3. 30

1. 장강, 유원종, 김동호, 김택, “분리형 집광 태양전지 시스템대한민국 특허출원번호 P2009-0015440, 2008.2.24

(4) Books

1. Hua-Min Li, Won Jong Yoo, Two-Dimensional Carbon: Fundamental Properties, Synthesis, Characterization, and Applications, CRC Press, Chapter 10. Photonic Properties of Graphene Device.