A scientist from Sungkyunkwan University (SKKU) has successfully demonstrated two-dimensional (2D) memory devices that can advance smart device technology greatly. An SKKU research team led by Prof. Won Jong Yoo from the SKKU Advanced Institute of Nano-Technology (SAINT) published an article "Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices" online in Nature Communication, an internationally prominent publication, on March 27 2013.
Prof. Yoo explained about the research: "multi-stacking of atomically thin 2D materials enables vertical integration and device fabrication on demand" also elaborating: "these ultrathin heterostructured memory devices consisting of 2D materials have great potential for further miniaturization, application in low-cost electronics and flexible memory device applications, especially in the future mobile devices requiring embedded memories integrated into multi-functional systems-on-a-chip."
In the research, graphene, one of the 2D materials, and molybdenum disulphide have been employed as both channel and charge-trapping layers. It is the first time that semi-conductor devices have been made by only stacking 2D materials. Also, the research demonstrated that vertical integration and device performance can be controlled by varying the thickness of the 2D materials in memory devices. 2D materials have been in the limelight recently as 'materials of the future' as the silicone semi-conductor miniaturization skills hit their limits.
Prof. Yoo, a doctoral candidate Min Sup Choi, and Dr. Gwan-Hyoung Lee from Colombia University took the lead in the research, and Prof. Philip Kim, Prof. James Hone and Dr. Young-Jun Yu from Columbia University and SKKU doctoral students Dae-Yeong Lee and Seung Hwan Lee have participated in the research as well.
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