21 |
[2014.11] Congrat!!! Dewu's paper has been published in "Nanoscale"
3224
|
DaeyeongLee |
Dec 03, 2014 |
585031 |
Edge contacts of graphene formed by using a controlled plasma treatment Despite the fact that the outstanding properties of graphene are well known, the electrical performance of the material is limited by the contact resistance at the metal...
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20 |
[2014.08] Congrat!!! Min Sup's paper has been published in "ACS Nano"
1178
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DaeyeongLee |
Aug 22, 2014 |
261151 |
Lateral MoS2 p–n Junction Formed by Chemical Doping for Use in High-Performance Optoelectronics This paper demonstrates a technique to form a lateral homogeneous 2D MoS2 p–n junction by partially stacking 2D h-BN as a mask to p-dope MoS2....
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19 |
[2011.12] IEDM presented paper by Gang Zhang
1373
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권능 |
Aug 21, 2014 |
281808 |
Gang Zhang, Tian-Zi Shen, Hua-Min Li, Dae-Yeong Lee, Chang-Ho Ra and Won Jong Yoo*, IEEE Intl Electron Devices Meeting (IEDM 2011), 5-7 Dec 2011, “Electrically Switchable Graphene Photo-Sensor using Phase-Change Gate Filter for Non-Volatile ...
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18 |
[2014.06] Congrat!!! Sarang's paper has been published in "Applied Physics Letters"
5432
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DaeyeongLee |
Jun 13, 2014 |
632810 |
Sarang Gahng et al., "Reduction of metal contact resistance of graphene devices via CO2 cluster cleaning", v104, p223110 (2014)
http://scitation.aip.org/content/aip/journal/apl/104/22/10.1063/1.4881635
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17 |
[2014.05] Congrat!!! Seung Hwan's paper has been published in "Applied Physics Letters"
4413
|
권능 |
May 20, 2014 |
847379 |
Seung Hwan Lee and Daeyeong Lee et al. "High-performance photocurrent generation from two-dimensional WS2 field effect transistors, Applied Physics Letters, 104, 193113 (2014).
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16 |
[2014.02] Congrat!!! Huamin's paper has been published in "Scientific Reports"
4450
|
권능 |
Feb 11, 2014 |
636969 |
Hua-Min Li, Dae-Yeong Lee, Min Sup Choi, Deshun Qu, Xiaochi Liu, Chang-Ho Ra and Won Jong Yoo "Metal-Semiconductor Barrier Modulation for High Photoresponse in Transition Metal Dichalcogenide Field Effect Transistors", Scientific Reports 4, ...
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