NDPL

No. Subject Writer Date View
65 [2023.05] Modulation of Contact Resistance of Dual-Gated MoS2 FETs Using Fermi-Level Pinning-Free ... Hoseong Shin 2023.06.26 18:15:08 273
64 [2023.04] Achieving Ultrahigh Electron Mobility in PdSe2 Field-Effect Transistors via Semimetal An... Hoseong Shin 2023.06.26 18:13:23 211
63 [2023.03] Percolation-Based Metal?Insulator Transition in Black Phosphorus Field Effect Transistors Hoseong Shin 2023.06.26 18:12:30 76
62 [2023.01] Effects of Oxygen Plasma Treatment on Fermi-Level Pinning and Tunneling at the Metal?Sem... Hoseong Shin 2023.06.26 18:11:32 88
61 [2022.12] Probing Intrinsic Defect-Induced Trap States and Hopping Transport in Two-Dimensional Pd... Hoseong Shin 2023.06.26 18:10:30 71
60 [2022.12] Gate-Controlled Metal to Insulator Transition in Black Phosphorus Nanosheet-Based Field ... Hoseong Shin 2023.06.26 18:09:19 64
59 [2022.09] Self-Powered 2D MoS2/WOx/WSe2 Heterojunction Photodetector Realized by Oxygen Plasma Tre... Hoseong Shin 2023.06.26 18:06:30 63
58 [2022.07] Selective Electron Beam Patterning of Oxygen-Doped WSe2 for Seamless Lateral Junction Tr... Hoseong Shin 2022.09.15 16:15:00 453
57 [2022.05] Recent Progress in 1D Contacts for 2D-Material-Based Devices Hoseong Shin 2022.09.15 16:14:06 186
56 [2022.03] Metal?Insulator Transition Driven by Traps in 2D WSe2 Field-Effect Transistor Hoseong Shin 2022.09.15 16:13:17 109
55 [2021.12] Fermi Level Pinning Dependent 2D Semiconductor Devices: Challenges and Prospects Hoseong Shin 2022.09.15 16:12:09 89
54 [2022.01] Contact Resistivity in Edge-Contacted Graphene Field Effect Transistors Hoseong Shin 2022.09.15 16:10:57 90
53 [2021.12] Anomalously persistent p-type behavior of WSe2 field-effect transistors by oxidized edge... Hoseong Shin 2022.09.15 16:09:36 96
52 [2021.12] Ultrahigh Anisotropic Transport Properties of Black Phosphorus Field Effect Transistors ... Hoseong Shin 2022.09.15 16:08:30 85
51 [2021.11] High carrier mobility in graphene doped using a monolayer of tungsten oxyselenide Hoseong Shin 2022.09.15 16:07:31 87
50 [2021.07] Chemical Dopant-Free Doping by Annealing and Electron Beam Irradiation on 2D Materials Hoseong Shin 2022.09.15 16:06:26 99
49 [2021.08] Analytical measurements of contact resistivity in two-dimensional WSe2 field-effect tran... Hoseong Shin 2022.09.15 16:04:23 78
48 [2021.06] High performance WSe2 p-MOSFET with intrinsic n-channel based on back-to-back p-n juncti... Hoseong Shin 2022.09.15 15:20:26 92
47 [2021.03] Traps at the hBN/WSe2 interface and their impact on polarity transition in WSe2 Hoseong Shin 2022.09.15 15:17:57 107
46 [2021.01] Fermi-Level Pinning Free High-Performance 2D CMOS Inverter Fabricated with Van Der Waal... Hoseong Shin 2021.04.29 19:25:56 702