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Papers & Patents
Home > Papers & Patents
No.
Subject
Writer
Date
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46
[2021.01] Fermi-Level Pinning Free High-Performance 2D CMOS Inverter Fabricated with Van Der Waal...
Hoseong Shin
2021.04.29 19:25:56
467
45
[2021.02] Low-Temperature and Large-Scale Production of a Transition Metal Sulfide Vertical Hetero...
Hoseong Shin
2021.04.29 19:24:41
276
44
[2021.03] Interface state density and barrier height improvement in ammonium sulfide treated Al2O3...
Hoseong Shin
2021.04.29 19:21:48
82
43
[2021.03] Resonant tunnelling diodes based on twisted black phosphorus homostructures
Hoseong Shin
2021.04.29 19:19:26
73
42
[2020.12] Damage-Free Atomic Layer Etch of WSe2: A Platform for Fabricating Clean Two-Dimensional ...
Hoseong Shin
2021.04.29 19:16:15
109
41
[2020.10] Electrical characterization of 2D materials-based field-effect transistors
Ho Seong Shin
2020.11.24 11:23:31
241
40
[2020.09] Charge Density Depinning in Defective MoTe? Transistor by Oxygen Intercalation
Ho Seong Shin
2020.09.22 16:44:14
215
39
[2020.09] Control of the Schottky Barrier and Contact Resistance at Metal?WSe2 Interfaces by Polym...
Ho Seong Shin
2020.09.17 15:08:49
178
38
[2020.02] Phase-Engineered Molybdenum Telluride/Black Phosphorus Van der Waals Heterojunctions for...
Hoseong Shin
2020.08.21 14:45:34
167
37
[2020.05] Self-Terminated Surface Monolayer Oxidation Induced Robust Degenerate Doping in MoTe2 fo...
Ho Seong Shin
2020.07.16 15:39:02
175
36
[2020.04] Gate-Modulated Ultrasensitive Visible and Near-Infrared Photodetection of Oxygen Plasma-...
Ho Seong Shin
2020.07.16 15:37:17
136
35
[2020.01] High-Electric-Field-Induced Phase Transition and Electrical Breakdown of MoTe2
Ho Seong Shin
2020.07.16 15:34:51
106
34
[2019.05] Transferred via contacts as a platform for ideal two-dimensional transistors
Ho Seong Shin
2020.07.16 15:32:46
101
33
[2019.09] Metallic contact induced van der Waals gap in a MoS2 FET
Kwang Young Lee
2019.10.01 11:21:18
343
32
[2019.09] The device level modulation of carrier transport in a 2D WSe2 field effect transistor vi...
Kwang Young Lee
2019.09.18 13:12:49
291
31
[2019.06] A Fermi-Level-Pinning-Free 1D Electrical Contact at the Intrinsic 2D MoS2-Metal Junction
Kwang Young Lee
2019.08.13 13:07:01
171
30
[2019.02] Ohmic Contact in 2D Semiconductors via the Formation of a Benzyl Viologen Interlayer
Kwang Young Lee
2019.08.13 13:05:32
165
29
[2018.11] Advanced materials interfaces / Energy Dissipation in Black Phosphorus Heterostructured ...
Kwang Young Lee
2018.11.24 12:27:00
365
28
[2018.08] Nature communications / Impact ionization by hot carriers in a black phosphorus field ef...
Kwang Young Lee
2018.08.28 17:36:23
344
27
[2018.08] Advanced functional materlals / Dielectric Dispersion and High Field Response of Multila...
Kwang Young Lee
2018.08.19 16:16:13
282
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