Phase Transition properties of 2D layered materials
Phase transitions in 2D layered materials, Analysis of crystal structures for each phase by TEM, Fabrication of phase change memory devices.
Power Dissipation in two dimensional Materials
High electrical field transport and efficient thermal power dissipation in two dimensional materials by engineering the device structure and carefully choosing thermally favorable materials.
F. Ahmed et al. Adv. Funct. Mater., 27, 1604025 (2017)
Using BV to deal with the issue on Black phosphorus transistors
The BV passivated BP devices exhibit excellent stability under both an ambient atmosphere and vacuum; their transistor performance is maintained semi-permanently. Unlike their intrinsic p-type properties, passivated BP devices present advantageous ambipolar properties with much higher electron mobility up to ∼83 cm2 V−1 s−1 from 2-terminal measurement at 300 K, compared to other reported studies on n-type BP transistors.
Doping of 2D materials
Stable, reliable and high quality doping techniques for 2D materials.
Contacts of 2D materials
High quality devices with low contact resistance and De-pinning.
High performance MoS2 transistor formed by using bottom graphene electrode
We investigated the carrier transport in multi-layer MoS2 with consideration of the contact resistance (Rc) and interlayer resistance (Rint). A bottom graphene contact was suggested to overcome the degradation of Id modulation in a back gated multi-layer MoS2 field effect transistor (FET) due to the accumulated Rint and increased Rc with increasing thickness.
Tunneling device based on 2D semiconductor heterostructures
Tunneling phenomena are observed in BP-MoS2 heterojunctions for the first time. The diode property varied between conventional forward rectifying diode, Zener diode and backward rectifying diode through back gate modulation.
Depinning MoS2 Fermi-level via One-dimensional Electrical Contact
This work is focusing on engineering MoS2/metal interface to achieve Fermi-level depinning. I demonstrated MoS2/metal one-dimensional contact to achieve intrinsic ambipolar MoS2 FET. It opens a door to observing special quantum effect in TMDCs and to simply realizing complementary integrated circuitry, based on high performance intrinsic MoS2.