Papers

80. Fida Ali, Nasir Ali, Muhammad Taqi, Tien Dat Ngo, Myeongjin Lee, Hyungyu Choi, Won-Kyu Park, Euyheon Hwang, and Won Jong Yoo, "Metal–Insulator Transition Driven by Traps in 2D WSe2Field-Effect Transistor", Adv. Electron. Mater. 2022, 2200046, 2022

79. Xiaochi Liu, Min Sup Choi, Euyheon Hwang, Won Jong Yoo, and Jian Sun, "Fermi Level Pinning Dependent 2D Semiconductor Devices: Challenges and Prospects", Adv. Mater. 2022, 2108425, 2022

78. Sungwon Lee, Hyungyu Choi, Inyong Moon, Hoseong Shin, Kenji Watanabe, Takashi Taniguchi, and Won Jong Yoo, "Contact Resistivity in Edge-Contacted Graphene Field Effect Transistors", Adv. Electron. Mater. 2022, 2101169, 2022

77. Tien Dat Ngo, Min Sup Choi, Myeongjin Lee, Fida Ali and Won Jong Yoo, "Anomalously persistent p-type behavior of WSe2 field-effect transistors by oxidized edge-induced Fermi-level pinning", J. Mater. Chem. C, 2022, Advance Article, 2022

76. Myeongjin Lee, Nasir Ali, Fida Ali, Kenji Watanabe, Takashi Taniguchi, and Won Jong Yoo, "Ultrahigh Anisotropic Transport Properties of Black Phosphorus Field Effect Transistors Realized by Edge Contact", Adv. Electron. Mater. 2021, 2100988, 2021

75. Min Sup Choi, Ankur Nipane, Brian S. Y. Kim, Mark E. Ziffer, Ipshita Datta, Abhinandan Borah, Younghun Jung, Bumho Kim, Daniel Rhodes, Apoorv Jindal, Zachary A. Lamport, Myeongjin Lee, Amirali Zangiabadi, Maya N. Nair, Takashi Taniguchi, Kenji Watanabe, Ioannis Kymissis, Abhay N. Pasupathy, Michal Lipson, Xiaoyang Zhu, Won Jong Yoo, James Hone and James T. Teherani, "High carrier mobility in graphene doped using a monolayer of tungsten oxyselenide", Nature Electronics volume 4, pages731–739 (2021), 2021

74. Min Sup Choi, Myeongjin Lee, Tien Dat Ngo, James Hone and Won Jong Yoo, "Chemical Dopant-Free Doping by Annealing and Electron Beam Irradiation on 2D Materials", Adv. Electron. Mater. 2021, 2100449, 2021

73. Inyong Moon, Min Sup Choi, Sungwon Lee, Ankur Nipane, James Hone and Won Jong Yoo, "Analytical measurements of contact resistivity in two-dimensional WSe2 field-effect transistors", 2D Mater. 8 (2021) 045019, 2021

72. Xiaochi Liu, Yuchuan Pan, Junqiang Yang, Deshun Qu, Huamin Li, Won Jong Yoo, and Jian Sun, "High performance WSe2 p-MOSFET with intrinsic n-channel based on back-to-back p–n junctions", Appl. Phys. Lett. 118, 233101 (2021), 2021

71. Fida Ali, Faisal Ahmed, Muhammad Taqi, Sekhar Babu Mitta, Tien Dat Ngo, Deok Joon Eom, Kenji Watanabe, Takashi Taniguchi, Hyoungsub Kim, Euyheon Hwang and Won Jong Yoo, "Traps at the hBN/WSe2 interface and their impact on polarity transition in WSe2", 2D Mater. 8 (2021) 035027, 2021

70. Tien Dat Ngo, Zheng Yang, Myeongjin Lee, Fida Ali, Inyong Moon, Dong Gyu Kim, Takashi Taniguchi, Kenji Watanabe, Kang-Yoon Lee, and Won Jong Yoo, "Fermi-Level Pinning Free High-Performance 2D CMOS Inverter Fabricated with Van Der Waals Bottom Contacts", Adv. Electron. Mater. 2021, 2001212, 2021

69. Chaitanya Kaluram Kanade, Hyunho Seok, Vinit Kaluram Kanade, Kubra Aydin, Hyeong -U Kim, Sekhar Babu Mitta, Won Jong Yoo, and Taesung Kim, "Low-Temperature and Large-Scale Production of a Transition Metal Sulfide Vertical Heterostructure and Its Application for Photodetectors", ACS Appl. Mater. Interfaces 2021, 13, 8710−8717, 2021

68. Khushabu Agrawal, Vilas Patil, Fida Ali, Matheus Rabelo, Won Jong Yoo, Eun-Chel Cho, Junsin Yi, "Interface state density and barrier height improvement in ammonium sulfide treated Al2O3/Si interfaces", Current Applied Physics 26 (2021) 83–89, 2021

67. Pawan Kumar Srivastava, Yasir Hassan, Duarte J. P. de Sousa, Yisehak Gebredingle, Minwoong Joe, Fida Ali, Yang Zheng, Won Jong Yoo, Subhasis Ghosh, James T. Teherani,Budhi Singh, Tony Low, and Changgu Lee, "Resonant tunnelling diodes based on twisted black phosphorus homostructures", Nature electronics, 1-8, 2021

66. Ankur Nipane, Min Sup Choi, Punnu Jose Sebastian, Kaiyuan Yao, Abhinandan Borah, Prathmesh Deshmukh, Younghun Jung, Bumho Kim, Anjaly Rajendran, Kevin W. C. Kwock, Amirali Zangiabadi, Vinod M. Menon, P. James Schuck, Won Jong Yoo, James Hone, and James T. Teherani, "Damage-Free Atomic Layer Etch of WSe2: A Platform for Fabricating Clean Two-Dimensional Devices", ACS Appl.Matter. Interfaces 2021, 13, 1930-1942, 2021

65. Sekhar Babu Mitta, Min Sup Choi, Ankur Nipane, Fida Ali, Changsik Kim, James T Teherani, James Hone and Won Jong Yoo , "Electrical characterization of 2D materials-based field-effect transistors", IOPscience, 2D Mater. 8 (2021) 012002, 2020

64. Xiaochi Liu, Deshun Qu, Lu Wang, Ming Huang, Yahua Yuan, Peng Chen, Yuanyuan Qu, Jian Sun, and Won Jong Yoo , "Charge Density Depinning in Defective MoTe2 Transistor by Oxygen Intercalation", Advanced Fuctional Materials, 2004880, 2020

63. Tien Dat Ngo, Myeongjin Lee, Zheng Yang, Fida Ali, Inyong Moon, and Won Jong Yoo, "Control of the Schottky Barrier and Contact Resistance at Metal–WSe2 Interfaces by Polymeric Doping", Advanced Electronic Materials, 2000616, 2020

62. Ki Hyun Kim, Ki Seok Kim, You Jin Ji, Inyong Moon, Keun Heo, Dong-Ho Kang, Kyong Nam Kim, Won Jong Yoo, Jin-Hong Park, Geun Young Yeom, "Effect of large work function modulation of MoS 2 by controllable chlorine doping using a remote plasma", J. Mater. Chem. C, 2020, 8, 1846, 2020

61. Ming Huang, Pavel V Bakharev, Zhu-Jun Wang, Mandakini Biswal, Zheng Yang, Sunghwan Jin, Bin Wang, Hyo Ju Park, Yunqing Li, Deshun Qu, Youngwoo Kwon, Xianjue Chen, Sun Hwa Lee, Marc-Georg Willinger, Won Jong Yoo, Zonghoon Lee, Rodney S Ruoff, "Large-area single-crystal AB-bilayer and ABA-trilayer graphene grown on a Cu/Ni (111) foil", Nature Nanotechnology, 15, pages289–295(2020), 2020

60. Yasir Hassan, Pawan Kumar Srivastava, Budhi Singh, Muhammad Sabbtain Abbas, Fida Ali, Won Jong Yoo, Changgu Lee, "Phase-Engineered Molybdenum Telluride/Black Phosphorus Van der Waals Heterojunctions for Tunable Multivalued Logic", ACS applied materials and interfaces, 12, 14119-14124, 2020

59. Xiaochi Liu, Deshun Qu, Yahua Yuan, Jian Sun, and Won Jong Yoo, "Self-Terminated Surface Monolayer Oxidation Induced Robust Degenerate Doping in MoTe2 for Low Contact Resistance", ACS applied materials and interfaces, 12, 26586-26592, 2020

58. Sekhar Babu Mitta, Fida Ali, Zheng Yang, Inyong Moon, Faisal Ahmed, Tae Jin Yoo, Byoung Hun Lee, and Won Jong Yoo, "Gate-Modulated Ultrasensitive Visible and Near-Infrared Photodetection of Oxygen Plasma-Treated WSe2 Lateral pn-Homojunctions", ACS applied materials and interfaces, 12, 23261-23271, 2020

57. Changsik Kim, Sudarat Issarapanacheewin, Inyong Moon, Kwang Young Lee, Changho Ra, Sungwon Lee, Zheng Yang, and Won Jong Yoo, "High-Electric-Field-Induced Phase Transition and Electrical Breakdown of MoTe2" Advanced Electronic Materials, 1900964, 2020

56. Da Luo, Meihui Wang, Yunqing Li, Changsik Kim, Ka Man Yu, Yohan Kim, Huijun Han, Mandakini Biswal, Ming Huang, Youngwoo Kwon, Min Goo, Dulce C Camacho‐Mojica, Haofei Shi, Won Jong Yoo, Michael S Altman, Hyung‐Joon Shin, Rodney S Ruoff, "Adlayer‐free large‐area single crystal graphene grown on a Cu (111) foil" Advanced Materials, 1903615, 2019

55. Younghun Jung, Min Sup Choi, Ankur Nipane, Abhinandan Borah, Bumho Kim, Amirali Zangiabadi, Takashi Taniguchi, Kenji Watanabe, Won Jong Yoo, James Hone and James T. Teherani, "Transferred via contacts as a platform for ideal two-dimenstional transistors" Nature electronics, 2, 187, 2019

54. Changsik Kim, Kwang Young Lee, Inyong Moon, Sudarat Issarapanacheewin and Won Jong Yoo, "Metallic contact induced van der Waals gap in a MoS2 FET" Nanoscale, DOI: 10.1039/c9nr04567h, 2019

53. Inyong Moon, Sungwon Lee, Myeongjin Lee, Changsik Kim, Daehee Seol, Yunseok Kim, Ki Hyun Kim, Geun Young Yeom, James T. Teherani, James Hone, and Won Jong Yoo, "The device level modulation of carrier transport in a 2D WSe2 field effect transistor via a plasma treatment" Nanoscale, DOI: 10.1039/c9nr05881h, 2019

52. Zheng Yang, Changsik Kim, Kwang Young Lee, Myeongjin Lee, Samudrala Appalakondaiah, Chang-Ho Ra, Kenji Watanabe, Takashi Taniguchi, Kyeongjae Cho, Euyheon Hwang, James Hone, and Won Jong Yoo, "A Fermi-Level-Pinning-Free 1D Electrical Contact at the Intrinsic 2D MoS2-Metal Junction" Advanced Materials, 31, 1808231, 2019

51. Dewu Yue, Changsik Kim, Kwang Young Lee, and Won Jong Yoo, "Ohmic Contact in 2D semiconductors via the Formation of a Benzyl Viologen Interlayer" Advanced Functional Materials, 29, 1807338, 2019

50. Fida Ali, Faisal Ahmed, Zheng Yang, Inyong Moon, Myeongjin Lee, Yasir Hassan, Changgu Lee and Won Jong Yoo, "Dielectric Dispersion and High Field Response of Multilayer Hexagonal Boron Nitride" Advanced Functional Materials, 1804235, 2018

49. Faisal Ahmed, Sunwoo Heo, Zheng Yang, Fida Ali, Chang Ho Ra, Ho‐In Lee, Takashi Taniguchi, James Hone, Byoung Hun Lee, Won Jong Yoo, "Energy Dissipation in Black Phosphorus Heterostructured Devices" Advanced Materials Interfaces, 1801528, 2018

48. Faisal Ahmed, Young Duck Kim, Zheng Yang, Pan He, Euyheon Hwang, Hyunsoo Yang, James Hone, and Won Jong Yoo, "Impact ionization by hot carriers in a black phosphorus field effect transistor" Nature communications, 9, 3414, 2018

47. Faisal Ahmed, Sunwoo Heo, Zheng Yang Fida Ali, Chang Ho Ra, Ho-In Lee, Takasho Taniquchi, James Hone, Byoung Hun Lee, and Won Jong Yoo, "Dielecric Dispersion and High Field Response of Multilayer Hexagonal Boron Nitride" Advanced Functional Materials, 1804235, 2018

46. Xiaochi Liu, Deshun Qu, Min Sup Choi, Changmin Lee, Hyoungsub Kim, and Won Jong Yoo, "Homogeneous molybdenum disulfide tunnel diode formed via chemical doping" Applied Physics Letters, 112, 183103, 2018

45. Min Sup Choi, Byung-ki Cheong, Chang Ho Ra, Suyoun Lee, Jee-Hwan Bae, Sungwoo Lee, Gun-Do Lee, Cheol-Woong Yang, James Hone, and Won Jong Yoo, "Electrically Driven Reversible Phase Changes in Layerd In2Se3 Crystalline Film" Advanced Materials, 29, 42, 1703568, 2017

44. Deshun Qu, Xiaochi Liu, Ming Huang, Changmin Lee, Faisal Ahmed, Hyoungsub Kim, Rodney S. Ruoff, James Hone, and Won Jong Yoo, "Carrier-Type Modulation and Mobility Improvement of Thin MoTe2" Advanced Materials, 1606433, 2017

43. Xiaochi Liu, Deshun Qu, Hua-Min Li, Inyong Moon, Faisal Ahmed, Changsik Kim, Myeongjin Lee, Yongsuk Choi, Jeong Ho Cho, James C. Hone, and Won Jong Yoo, "Modulation of Quantum Tunneling via a Vetical Two-Dimensional Black Phosphorus and Molybdenum Disulfide p−n Junction" ACS nano, 2017

42. Changsik Kim, Inyong Moon, Daeyeong Lee, Min Sup Choi, Faisal Ahmed, Seunggeol Nam, Yeonchoo Cho, Hyeon-Jin Shin, Seongjun Park, and Won Jong Yoo, "Fermi Level Pinning at Electrical Metal Contacts of Monolayer Molybdenum Dichalcogenides" ACS nano, 11, 1588, 2017

41. Faisal Ahmed, Young Duck Kim, Min Sup Choi, Xiaochi Liu, Deshun Qu, Zheng Yang, Jiayang Hu, Irving P. Herman, James Hone, and Won Jong Yoo, “High Electric Field Carrier Transport and Power Dissipation in Multilayer Black Phosphorus Field Effect Transistor with Dielectric Engineering” Advanced Functional Material, 27, 4, 1604025, 2017

40. Suhhyun Kim, Min Sup Choi, Deshun Qu, Chang Ho Ra, Xiaochi Liu, Minwoo Kim, Young Jae Song, Won Jong Yoo, "Effects of plasma treatment on surface properties of ultrathin layered MoS2", 2D materials, 3, 035002, 2016 DOI: doi:10.1088/2053-1583/3/3/035002

39. Chang-Ho Ra, Min Sup Choi, Daeyeong Lee, Won Jong Yoo, "Effects of Plasma Treatment on Contact Resistance and Sheet Resistance of Graphene FET", J. Korean Inst. Surf. Eng., 49, 152-158, 2016

38. Dewu Yue, Daeyeong Lee, Youngdae Jang, Min Sup Choi, Hye Jin Nam, Duk-Young Jung, and Won Jong Yoo, "Passivated ambipolar black phosphorus transistor", Nanoscale, DOI: 10.1039/C6NR02554D, 2016

37. Xiaochi Liu, Deshun Qu, Jungjin Ryu, Faisal Ahmed, Zheng Yang, Daeyeong Lee, Won Jong Yoo, "P-type polar transition of chemically doped multilayer MoS2 transistor", Advanced Materials, v28, p2345, DOI: 10.1002/adma.201505154, 2016

36. Deshun Qu, Xiaochi Liu, Faisal Ahmed, Daeyeong Lee and Won Jong Yoo, "Self-screened high performance multi-layer MoS2 transistor formed by using bottom graphene electrode", Nanoscale, DOI: 10,1039/C5NR06076A, 2015

35. Faisal Ahmed, Min Sup Choi, Xiaochi Liu and Won Jong Yoo, "Carrier transport at the metal-MoS2 interface", Nanoscale, 7, 9222, 2015

34. Hua-Min Li, Daeyeong Lee, Deshun Qu, Xiaochi Liu, Jungjin Ryu, Alan Seabaugh, and Won Jong Yoo "Ultimate thin vertical p-n junction composed of two-dimensional layered molybdenum disulfide", Nature Communications, 6, 6564, 2015

33. Xiaochi Liu, E. H. Hwang, Won Jong Yoo, Suyoun Lee, Byung-ki Cheong "High carrier mobility in Si-MOSFETs with a hexagonal boron nitride buffer layer", Solid State Communications, 209-210, 1, 2014

32. Dewu yue, Changho Ra, Xiaochi Liu, Daeyeong Lee and Won Jong Yoo, "Edge contacts of graphene formed by using a controlled plasma treatment", Nanoscale, , 825, 2015

31. Min Sup Choi, Deshun Qu, Daeyeong Lee, Xiaochi Liu, Kenji Watanabe, Takashi Taniguchi, Won Jong Yoo "Lateral MoS2 p–n Junction Formed by Chemical Doping for Use in High-Performance Optoelectronics", ACS Nano, 8, 9332, 2014

30. Sarang Gahng, Chang Ho Ra, Yu Jin Cho, Jang Ah Kim, Taesung Kim, Won Jong Yoo "Reduction of metal contact resistance of graphene devices via CO2 cluster cleaning", Applied Physics Letters, 104, 223110, 2014

29. Seung Hwan Lee, Daeyeong Lee, Wan Sik Hwang, Euyheon Hwang, Debdeep Jena, and Won Jong Yoo "High-performance photocurrent generation from two-dimensional WS2 field-effect transistors", Applied Physics Letters, 104, 193113, 2014.

28. Hua-Min Li, Dae-Yeong Lee, Min Sup Choi, Deshun Qu, Xiaochi Liu, Chang-Ho Ra and Won Jong Yoo "Metal-Semiconductor Barrier Modulation for High Photoresponse in Transition Metal Dichalcogenide Field Effect Transistors", Scientific Reports 4, 4041, 2014.

27. Seung Hwan Lee, Min Sup Choi, Jia Lee, Chang Ho Ra, Xiaochi Liu, Euyheon Hwang, Jun Hee Choi, Jiangqiang Zhong, Wei Chen, and Won Jong Yoo, "High performance vertical tunneling diodes using graphene/hexagonal boron nitride/graphene hetero-structure", Applied Physics Letters 104, 053103, 2014.

26. Ju-Hyuck Lee, Keun Young Lee, Manoj Kumar Gupta, Tae Yun Kim, Dae-Yeong Lee, Junho Oh, Changkook Ryu, Won Jong Yoo, Chong-Yun Kang, Seok-Jin Yoon, Ji-Beom Yoo, and Sang-Woo Kim, "Highly stretchable piezoelectric-pyroelectric hybrid nanogenerator", Advanced Materials, 2013.

25. Gwan-Hyoung Lee, Young-Jun Yu, Xu Cui, Nicholas Petrone, Chul-Ho Lee, Min Sup Choi, Dae-Yeong Lee, Changgu Lee, Won Jong Yoo, Kenji Watanabe, Takashi Taniguchi, Colin Nuckolls, Philip Kim, and James Hone, Flexible and Transparent MoS2 Field Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures, ACS Nano, (2013).

24. Dae-Yeong Lee, Hyunjin Kim. Hua-Min Li, A-Rang Jang, Yeong-Dae Lim, Seung Nam Cha, Young Jun Park, Dae Joon Kang, Won Jong Yoo, Hybrid energy harvester based on nanopillar solar cells and PVDF nanogenerator, Nanotechnology, 24, 175402 (2013).

23. Min Sup Choi, Gwan-Hyoung Lee, Young-Jun Yu, Dae-Yeong Lee, Seung Hwan Lee, Philip Kim, James Hone, Won Jong Yoo, Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices, Nature communications, 4, 1624 (2013).

22. Gang Zhang, Zhe Wu, Jeung-hyun Jeong, Doo Seok Jeong, Won Jong Yoo, Byung-ki Cheong, Modified write-and-verify scheme for improving the endurance of multi-level cell phase-change memory using Ge-doped SbTe, Solid-State Electronics, 76, 67-70 (2012).

21. Hua-Min Li, Dae-Yeong Lee, and Won Jong Yoo, Optoelectronic Performance of Radial-Junction Si Nanopillar and Nanohole Solar Cells, IEEE TED, 59, 2368 (2012).

20. Yeong-Dae Lim, Dae-Yeong Lee, Tian-Zi Shen, Chang-Ho Ra, Jae-Young Choi, and Won Jong Yoo, Si-Compatible Cleaning Process for Graphene Using Low-Density Inductively Coupled Plasma, ACS Nano, 6, 4410 (2012).

19. Min Sup Choi, Seung Hwan Lee, and Won Jong Yoo, Plasma treatments to forming metal contacts in graphene FET, J. Appl. Phys. 110, 073305 (2011).

18. Zhang Gang, Zhe Wu, and Won Jong Yoo, High-Speed Multi-Level NAND Flash Memory with Tight Vth Distribution Using Engineered-Potential-Well and Forward-Bias Adjusted Programming, IEEE Transactions on Electron Devices, 58(10), 3321-3228 (2011).

17. Hua-Min Li, Gang Zhang, and Won Jong Yoo: Estimation of Trapped Charge Density in SONOS Flash Memory Using Parallel Capacitor Model, IEEE Transactions on Electron Devices, 58(10), 3254-3259 (2011).

16. Yeong-Dae Lim, Dae-Yeong Lee, Won Jong Yoo, Han Seo Ko and Soo-Hong Lee, Temperature of a Semiconducting Substrate Exposed to Inductively Coupled Plasma, JKPS, 59(2) 262-270 (August 12, 2011).

15. Gang Zhang, Zhe Wu, Jeung-hyun Jeong, Doo Seok Jeong, Won Jong Yoo, and Byung-ki Cheong "Multi-Level Cell Storage with A Modulated Current Method for Phase-Change Memory Using Ge-Doped SbTe" Current Appl. Phys. 11 (supplement 2), e79-e81 (2011).

14. Hua-Min Li, Gang Zhang, Cheng Yang, Dae-Yeong Lee, Yeong-Dae Lim, Tian-Zi Shen and Won Jong Yoo, Young Jun Park, Hyunjin Kim, Seung Nam Cha, and Jong Min Kim, "Enhancement of Light Absorption Using High-k Dielectric in Localized Surface Plasmon Resonance for Silicon-Based Thin Film Solar Cells" J. Appl. Phys. 109, 093516 (2011).

13. Cheng Yang, Gang Zhang, Dae-Young Lee, Hua-Min Li, Young-Dae Lim, Won Jong Yoo, Young Jun Park and Jong Min Kim "Self-assembled wire arrays and ITO Contacts for Si Nano-wire Solar applications", Chin. Phys. Lett. 28 (3), 035202 (2011).

12. G. Zhang, C.H. Ra, H.-M. Li, T.-Z. Shen, B.-k. Cheong, and W. J. Yoo, IEEE TED, 57(11) 2794-2800 "Modified Potential Well Formed by Si/SiO2/TiN/TiO2/SiO2/TaN for Flash Memory Application" (2010).

11. Huamin Li, Gang Zhang, and Won Jong Yoo, Thin Solid Films 518, 6382-6384 "Deep Level Transient Spectroscopy on Charge Traps in high-k ZrO2" (2010).

10. C. Yang, G. Zhang, H.-M. Li, W. J. Yoo, Y. J. Park, and J. M. Kim, JKPS 56, 1488-1491 "Localized Surface Plasmon Resonance Caused by Ag Nanoparticles on SiN for Solar Cell Applications" (2010).

9. G. Zhang and W. J. Yoo, Solid State Electronics 54(1) 14-17 "Pulse Agitated Self-Convergent Programming for 4-Bit per Cell Dual Charge Storage Layer Flash Memory" (2010).

8. Gang Zhang and Won Jong Yoo, IEEE TED, 56(12) 3027-3032 "Vth Control by Complementary Hot Carrier Injection for SONOS Multi-Level Cell Flash Memory" (2009).

7. G. Zhang and W. J. Yoo, J. Nanoscience and Nanotechnology, 9, 7446-7450 "Dual Phase TiOxNy/TiN Charge Trapping Layer for Low-Voltage and High-Speed Flash Memory Application" (2009).

6. Gang Zhang, Chang Ho Ra, Hua-Min Li, Cheng Yang and Won Jong Yoo, 56(9) 1966-1973 IEEE TED "2nd-Bit-Effect-Free Multi-Bit Cell Flash Memory Using Si3N4/ZrO2 Split Charge Trapping Layer" (2009).

5 Yeong-Dae Lim, Seung-Hwan Lee, Won Jong Yoo, Oh-Jin Jung, Sang-Chul Kim and Han-Choon Lee, J. Korea Physical Soc, 54(5) 1774-1778 "Roles of F, O and Positive Ions in SF6/O2 Plasma in Forming Deep Via Structures" (2009).

4. Hua-Min Li, Chang-Ho Ra, Gang Zhang, Won Jong Yoo, Ki-Wook Lee, Jae-Dong Kim, J. Korea Physical Soc, 54(3) 1096-1099 "Frequency and Temperature Dependence of Dielectric Properties of PCB Substrate for Advanced Packaging Application" (2009).

3. Seung-Heon Ryu,1 Cheng Yang,1 Won Jong Yoo,1* Dong-Ho Kim 2 , and Teak Kim, J. Koea Physical Soc, 54(3) 1016-1020 "Effects of nanostructures formed by plasma etching on reflectance of solar cells" (2009).

2. Seung-Hwan Lee, Yeong-Dae Lim, Won Jong Yoo, J. Koea Physical Soc, 54(3) 998-1001 "Effects of Pulsating Bias Power on Deep Si Via Etching" (2009).

1. Yeong-Dae Lim, Seung-Hwan Lee, and Won Jong Yoo, J. Koea Physical Soc, 54(2) 616-620 "APPLICATION OF BLACK SILICON PHENOMENON TO FORM HIGH-ASPECT RATIO DEEP VIAS" (2009).

Patents

- 국외특허

8. Eletronic device including horizontal type diode using 2D material and method of manufacturing the same, 미국 출원번호 14/554,363, 출원일자 2014.11.26

7. Tunneling devices and methods of manufacturing the same, 미국 출원번호 14/188,862, 출원일자 2014.02.25

6. Two-dimensional material stacked flexible photosensor, 미국 출원번호 14/079,123, 출원일자 2013.11.13

5. 그래핀 물성 복귀 방법 및 장치, 미국 출원번호 13/864,732, 출원일자 2013.04.17

4. 적층된 그라핀과 플라즈몬을 이용한 고성능 광검출기, 미국 출원번호 13/747,920, 출원일자 2013.01.23

3. 투명전극에 의한 계면확장 graphene photodetector, 미국 출원번호 13/613,279, 출원일자 2012.09.13

2. 표면 플라즈마몬과 high-k 물질을 이용한 반사 방지구조 및 그 제조방법, 미국 출원번호 13/064,290, 출원일자 2011.03.16

1. J. H. Chen, W. J. Yoo, and Daniel Chan, A Method to assemble Al2O3 Dielectric Nano-dots on SiO2: Singapore Patent 134762 (Granted on 30 May 2008)

- 국내특허

15. 심전자, 유원종, 이화민, 최민섭, 최재영, 2차원 소재 적층 플렉서블 광센서, 특허등록번호 10-1532310, 등록일자: 2015.06.23

14. 2차원 물질을 이용한 수평형 다이오드를 포함하는 전자소자 및 그 제조방법, 대한민국 출원번호 10-2014-0061167, 출원일자: 2014.05.21

13. 최준희, 유원종, 이승환, 최민섭, 유호지, 이지아, 터널링 소자 및 그 제조방법, 대한민국 출원번호 10-2013-0083154, 출원일자: 2013.07.15

12. 유정준, 심전자, 유원종, 이화민, 최민섭, 최재영, 2차원 소재 적층 플렉서블 광센서, 대한민국 출원번호 10-2013-0016972, 출원일자: 2013.02.18

11. 최재영,유원종,이승환,임영대, 그래핀 물성 복귀 방법 및 장치, 대한민국 출원번호 10-2012-0089736, 출원일자: 2012.08.16

10. 최재영,유원종,라창호,심전자, 복합 투명 전극을 포함하는 그래핀 기반 포토 디텍터와 그 제조방법 및 포토 디텍터를 포함하는 장치, 대한민국 출원번호 11-121729, 출원일자: 20111121

9. 유원종,최민섭,이승환, 그래핀상의 금속 박막의 형성 방법, 대한민국 출원번호 11-100030, 출원일자: 20110930

8. 김성민,차승남,이화민,유원종, 광전소자 및 그 제작방법, 대한민국 출원번호 11-61802, 출원일자: 20110624

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